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- W2038916058 abstract "A radical-assisted pulsed-laser deposition technique was used to deposit aluminum nitride thin films at low substrate temperature (473 K) with a sintered AlN target and the optical emission spectra were measured during the laser ablation. In a nitrogen gas atmosphere, the optical emission peaks of atomic aluminum and singly ionized Al+ were observed from the ablation plume within the limit of detection. In a nitrogen radical atmosphere, that of atomic nitrogen and molecular nitrogen (N2 and N2+) were observed from the ablation plumes. The deposited films prepared in nitrogen gas atmosphere contained aluminum above the stoichiometric concentration. By using nitrogen radicals to assist the pulsed-laser deposition, the concentration of nitrogen in the films increased to 50 at% and stoichiometric AlN films were prepared. It is very effective for the fabrication of high-quality AlN thin films to use the nitrogen radicals to assist the pulsed-laser deposition." @default.
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- W2038916058 date "2000-11-01" @default.
- W2038916058 modified "2023-09-25" @default.
- W2038916058 title "Aluminum nitride thin films prepared by radical-assisted pulsed laser deposition" @default.
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- W2038916058 doi "https://doi.org/10.1016/s0042-207x(00)00329-8" @default.
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