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• W203894807 abstract "A low-cost, ultra-thin, transparency and high-quality zinc oxide (ZnO) film was successfully demonstrated as the carrier transporting and semiconducting layer for thin-film transistor (TFT) devices. The ZnO ultra-thin film with 3.7 nm in thickness was spin-coated from zinc acetate sol-gel solution under electroless condition. The film structure was characterized by atomic force microscopy and x-ray diffraction spectroscopy, respectively. Among various processing temperatures, the electrical property of the fabricated TFT verified the devices could be successfully achieved from suitable annealing temperature of 300 to 700 °C. However, the higher treatment temperature of 800 to 900 °C deteriorated the transistor property due to the loss of oxygen vacancy. The electrical properties of these ZnO-based n-type TFTs were obtained as follows: the mobility (μsat) ranged from 0.47 to 1.78 cm2 V-1 s-1, the on/off current ratio ranged from 5.7 × 105 to 1.6 × 106, and the threshold voltage ranged from 9.7 to 17.3 V. The long-term (100 days) characterization for the evaluation of the ultra-thin ZnO TFT reliability on the mobility and on/off current ratio strongly suggested the effectiveness of solution-processed ultra-thin film transistors. This proposed efficient sol-gel solution method to fabricate transparent ZnO ultra-thin film was relatively simple and cost-effective technique, and could be used as a new candidate of material for next-generation electronic devices to meet the growing demand of small feature bioelectronic sensor, light emitting diode and flexible panel." @default.
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• W203894807 date "2012-01-01" @default.
• W203894807 modified "2023-10-18" @default.
• W203894807 title "Facile Electroless Deposition of Zinc Oxide Ultrathin Film for Zinc Acetate Solution-processed Transistors" @default.
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• W203894807 doi "https://doi.org/10.1016/s1452-3981(23)19455-7" @default.
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