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• W2038967528 abstract "We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon." @default.
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• W2038967528 date "2013-10-01" @default.
• W2038967528 modified "2023-09-27" @default.
• W2038967528 title "Tin (Sn) for enhancing performance in silicon CMOS" @default.
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• W2038967528 doi "https://doi.org/10.1109/nmdc.2013.6707470" @default.
• W2038967528 hasPublicationYear "2013" @default.
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