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• W2038971705 abstract "The photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition were investigated by varying the PL temperature and excitation power density. Two different sapphire substrates, an exact c-plane and a c-plane with a 2° offset towards the a-plane, were used. The MQW samples were grown under the same conditions. A shift of the PL peak position to a longer wavelength was observed on the off-axis substrate. At all temperatures, the PL spectra from InGaN/GaN MQWs grown on the on-axis substrate showed a double-peak structure, while those from the MQWs grown on the off-axis substrate showed a single-peak structure. With increasing excitation power density, a larger blueshift was found on the off-axis substrate. These experimental results were discussed based on the segregation effect in InGaN MQWs. The high In composition regions on the off-axis substrate play an important role in the radiative recombination process." @default.
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• W2038971705 date "2003-03-01" @default.
• W2038971705 modified "2023-09-25" @default.
• W2038971705 title "Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation" @default.
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• W2038971705 doi "https://doi.org/10.1063/1.1540738" @default.
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