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• W2039087148 abstract "Tunneling current through ultrathin silicon dioxide films with a thickness of approximately 3.1 nm, formed on n-Si (100) by controlling preoxide growth during heating, is examined using Al/oxide/n-Si structures. Electron tunneling current through the oxide from n-Si to Al is decreased and the dielectric breakdown voltage is increased by the preoxide growth control. Electron tunneling current from Al to n-Si is increased by light exposure. The increase in electron tunneling current can be explained by the increase in oxide voltage with an inversion layer formed by photoexcitation." @default.
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• W2039087148 date "2004-11-15" @default.
• W2039087148 modified "2023-10-16" @default.
• W2039087148 title "Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure" @default.
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• W2039087148 doi "https://doi.org/10.1143/jjap.43.7857" @default.
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