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- W2039096871 abstract "Abstract We demonstrate the excellent performance of a 140 W AlGaN/GaN HEMT in the C-band, which is passivated by a Cat-CVD SiN film. The interface trap density of the AlGaN surface passivated by Cat-CVD film after NH 3 treatment is 3 × 10 12 cm − 2 , which is the smallest of investigated deposition techniques. The lowest interface trap density achieved by the Cat-CVD technique makes it possible to operate the AlGaN/GaN HEMT in the C-band. We clarify that the Cat-CVD technique is necessary for developing future amplifiers." @default.
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- W2039096871 date "2008-01-01" @default.
- W2039096871 modified "2023-09-27" @default.
- W2039096871 title "AlGaN/GaN HEMTs passivated by Cat-CVD SiN Film" @default.
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- W2039096871 doi "https://doi.org/10.1016/j.tsf.2007.06.223" @default.
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