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- W2039107840 abstract "The importance of mobility degradation (Δμ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>eff</sub> ) due to Negative Bias Temperature Instability (NBTI) stress is studied for precise modeling of p-MOSFET drain current degradation (Δ <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ID</i> ). An improvement to the SPICE mobility model is presented to incorporate Δμ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>eff</sub> , and the modified model is validated against experimental Δ <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ID</i> and transconductance degradation (Δ <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gm</i> ) over time, in the subthreshold to strong inversion region, across different SiON and high- <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>k</i> metal gate (HKMG) devices. To gain further insight into NBTI mobility degradation, the well-known physics-based mobility model consisting of three scattering components is revalidated across different devices. This analysis is beneficial for device and circuit simulations in Technology CAD and SPICE environments, respectively, for different process technologies." @default.
- W2039107840 created "2016-06-24" @default.
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- W2039107840 date "2013-07-01" @default.
- W2039107840 modified "2023-10-02" @default.
- W2039107840 title "A Physical and SPICE Mobility Degradation Analysis for NBTI" @default.
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- W2039107840 doi "https://doi.org/10.1109/ted.2013.2259493" @default.
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