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- W2039213015 abstract "Abstract Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al 0.175 Ga 0.825 N, Al 0.23 Ga 0.77 N, and Al 0.4 Ga 0.6 N, respectively. It was also found that we could achieve a high Al 0.175 Ga 0.825 N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I D larger than 850 mA/mm and a maximum g m about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller." @default.
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- W2039213015 date "2004-07-01" @default.
- W2039213015 modified "2023-10-18" @default.
- W2039213015 title "Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching" @default.
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- W2039213015 doi "https://doi.org/10.1016/j.mseb.2004.02.006" @default.
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