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• W2039247030 abstract "A variety of different transmission electron microscopy techniques, and particularly high-angle annular dark-field scanning transmission electron microscopy, has been used to reveal that V defects or inverted hexagonal pyramid defects in multiple InGaN∕GaN quantum well (QW) layers nucleate on threading dislocations that cross the InGaN QW. The defects have thin walls lying parallel to {101¯1} with the InGaN∕GaN QW structure. A formation mechanism for the V defects is proposed taking into account the growth kinetics of GaN and the segregation of In atoms in the strain field around the cores of the threading dislocations." @default.
• W2039247030 created "2016-06-24" @default.
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• W2039247030 date "2006-04-01" @default.
• W2039247030 modified "2023-09-29" @default.
• W2039247030 title "Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers" @default.
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• W2039247030 doi "https://doi.org/10.1063/1.2180532" @default.
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