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- W2039262051 abstract "Schottky barrier diodes of chromium on n-type epitaxial gallium arsenide phosphide (GaAsP) were studied from 25°C to 440°C. The diodes showed significant rectification properties up to a temperature of 440°C. At high temperature the reverse leakage current was 1.15 mA at 25 V with a diode area of 1.14×10−3cm2 as compared with 0.25-μA current at room temperature. The n factor derived from the slope of the ln I vs. V curves was 1.1. The barrier height for chromium was found to be 1.25 eV from the capacitance measurements and 1.12 eV from the saturation current vs. temperature measurements. The slope of the C-V curves yielded a carrier concentration of 6.0×1015 carriers per cm3. Des diodes de barrière Schottky au chrome sur du phosphure arsenure de gallium (GaAsP) épitaxial de type-n ont été étudiées de 25°C à 440°C. Les diodes ont indiqué des propriétés de redressement importantes jusqu'à une température de 440°C. A température élevée le courant de fuite inverse était de 1,15 mA à 25 V avec une surface de diode de 1,14×10−3cm2 par rapport à un courant de 0,25 μA à température ambiante. Le facteur n obtenu de la pente des graphiques de ln I en fonction de V était de 1,1. La hauteur de barrière pour le chrome a été trouvé être 1,25 eV des mesures de capacité et 1,12 eV des mesures du courant de saturation en fonction de la température. Le pente des courbes C-V a donné une concentration de porteurs de 6,0×1015 porteurs par cm3. Schottky-Dioden mit Chrom-Kontakten auf epitaktischen Galliumarsenidphosphid [Ga(As,P)] wurden zwischen 25°C und 440°C untersucht. Diese Dioden zeigen bis 440°C eine beachtliche Richtwirkung. Bei hohen Temperaturen betrug der Leckstrom in Sperrichtung 1,15 mA bei 25 V und einer Diodenfläche von 1,14.10−3/cm2; bei Raumtemperatur war der Sperrstrom 0,25/uA. Als n-Faktor ergibt sich aus der Steigung der gegen V aufgetragenen ln I-Kurve ein Wert von 1,1. Die Höhe der Barriere betrug für Chrom 1,25 eV und 1,12 eV, bei Kapazitätsmessung bzw. temperaturabhängiger Strommessung. Aus der Steigung der C-V-Kurve ergab sich eine Trägerdichte von 6.1015/cm3." @default.
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- W2039262051 date "1971-12-01" @default.
- W2039262051 modified "2023-10-17" @default.
- W2039262051 title "Electrical characteristics of GaAsP Schottky barrier diodes" @default.
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- W2039262051 doi "https://doi.org/10.1016/0038-1101(71)90121-3" @default.
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