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• W2039336449 abstract "Recent progress in the development of transparent thin-film transistors for integration with flexible displays is discussed. Specifically, the fabrication and properties of ZnO-based thin-film transistors on glass are described. Top-gate-type thin-film transistors with transparent n-type ZnO as the active channel layer have been fabricated via wet photolithography processing. The ZnO layers were deposited using pulsed laser deposition. A low leakage current of 10−7 A cm−2 was realized with amorphous HfO2 or (Ce, Tb)MgA11O19 as the gate dielectric. N-channel depletion-mode operation was shown for the undoped ZnO thin-film transistors. Phosphorus-doped ZnO and (Zn, Mg)O were also utilized as channel materials in order to realize a reduction in carrier density. The current–voltage measurements demonstrate an enhancement-mode device operation for the thin-film transistors with P-doped (Zn, Mg)O as the active channel layer and HfO2 serving as the gate dielectric." @default.
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• W2039336449 date "2005-06-06" @default.
• W2039336449 modified "2023-09-24" @default.
• W2039336449 title "Progress in semiconducting oxide-based thin-film transistors for displays" @default.
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• W2039336449 doi "https://doi.org/10.1088/0268-1242/20/8/012" @default.
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