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- W2039440810 abstract "Abstract Novel planar growth of highly strained heterostructure of InAs GaAs (0 0 1) by molecular beam epitaxy (MBE) has been studied by an in situ scanning tunneling microscope (STM) and reflection high-energy electron diffraction (RHEED). It is found that deposition of submonolayer indium on the GaAs As-rich 2 × 4 substrate produces a new 4 × 2 reconstruction, and a novel layer-by-layer growth of multilayers of InAs can be achieved when the growing front displays this 4 × 2 symmetry. Here, we will discuss the atomic structure of the 4 × 2 reconstruction, based on the voltage-dependent high-resolution STM images. In addition, a new strain relaxation mechanism — domain wall structure, in terms of the present novel planar growth mode, will also be addressed." @default.
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- W2039440810 date "1997-05-01" @default.
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- W2039440810 title "Surface reconstruction and morphology evolution in highly strained InAs epilayer growth on GaAs(0 0 1) surface" @default.
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- W2039440810 doi "https://doi.org/10.1016/s0022-0248(96)01235-3" @default.
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