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- W2039618090 abstract "The observed depth profile of the concentrations of the Frenkel defect (Si-Si bonds, ${E}^{ensuremath{'}}$ centers or peroxy radicals) in amorphous ${mathrm{SiO}}_{2}$ irradiated by high-energy ${mathrm{H}}^{+}$ ions is shown to be close to the calculated depth profile of O $2s$-shell ionization as well as that of the electronic energy deposition (EED). A new model, namely, bi-STE model is proposed: the Frenkel defect is created by nonradiative decay of two neighboring self-trapped excitons generated through O $2s$-shell ionization followed by an Auger decay process. This model can explain the observed linear dependence of the Frenkel defect formation on the EED, in contrast to the superlinear EED dependence expected for dense electronic excitation as for focused ArF excimer-laser irradiation." @default.
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- W2039618090 title "Bi-self-trapped-exciton model for Frenkel defect formation in amorphous<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>by proton irradiation" @default.
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- W2039618090 doi "https://doi.org/10.1103/physrevb.60.10616" @default.
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