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• W2039628110 abstract "We report results of an investigation of vertical transport in stacked InAs/InGaAs/InP self-assembled quantum dot multi-layers and show evidence of tunneling between quantum dot states in adjacent layers. In the presence of magnetic fields up to 12 T applied parallel to the current, tunneling through Zeeman-split quasi-zero dimensional states is observed. The difference in the g factor of two quantum dots in adjacent layers, which is due to the difference in confinement, is estimated from the data. The experimental value obtained for the difference in g factor is in good agreement with that obtained from a calculation of the quantum dots’ energy levels in the presence of the magnetic field." @default.
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• W2039628110 date "2011-10-15" @default.
• W2039628110 modified "2023-10-17" @default.
• W2039628110 title "Tunneling through stacked InAs/InGaAs/InP self-assembled quantum dots in a magnetic field" @default.
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• W2039628110 doi "https://doi.org/10.1063/1.3656706" @default.
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