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• W2039656714 abstract "Hexagonal GaN pyramids have been fabricated by hot-wall metal organic chemical vapor deposition (hot-wall MOCVD) and the growth evolution has been studied. It was concluded that the pyramid growth can be divided into two regimes separated by the adsorption kinetics of the {11¯01} surfaces of the pyramids. In the adsorption regime, the pyramids grow simultaneously in the <11¯01> and [0001] directions. In the zero-adsorption regime the pyramids grow only in the [0001] direction. Thus the pyramid growth ceases when the (0001) facet growth has been terminated. Large arrays consisting of highly uniform pyramids with apex radii of 3 nm or less were achieved in the zero-adsorption regime. The growth-regime type was concluded to have a large impact on the uniformity degradation of the pyramids, and their optical properties. The impacts of threading dislocations which enter the pyramid from underneath are also discussed." @default.
• W2039656714 created "2016-06-24" @default.
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• W2039656714 date "2013-01-01" @default.
• W2039656714 modified "2023-10-18" @default.
• W2039656714 title "Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD" @default.
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• W2039656714 doi "https://doi.org/10.1016/j.jcrysgro.2012.11.014" @default.
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