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• W2039794003 startingPage "4482" @default.
• W2039794003 abstract "We identified point defects and dopant atoms and measured their concentrations in as-grown and post-growth annealed highly Si-doped GaAs by scanning tunneling microscopy. The annealing under As atmosphere reduces the concentration of Si atoms incorporated into Si pairs and clusters by cluster dissolution, while the concentrations of Si donors, Si donor--Ga vacancy complexes, and Si donor--As vacancy complexes increase. For the dissolution of the Si clusters during heat treatment, a Ga-vacancy-mediated mechanism is suggested." @default.
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• W2039794003 date "1998-02-15" @default.
• W2039794003 modified "2023-09-26" @default.
• W2039794003 title "Changes of defect and active-dopant concentrations induced by annealing of highly Si-doped GaAs" @default.
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• W2039794003 doi "https://doi.org/10.1103/physrevb.57.4482" @default.
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