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- W2039884509 abstract "Abstract Zn diffusion of an In 0.5 Ga 0.5 P layer grown on semi-insulating GaAs substrate by the liquid phase epitaxy technique has been investigated using photoluminescence (PL) measurements. The PL spectrum shows a characteristic emission peak of In 0.5 Ga 0.5 P at 1.934 eV after diffusion. From temperature-dependent studies of this peak and depth profiling of this luminescence, it was found that this peak behaves like D-A (donor-acceptor) pair recombination and is associated with the interstitial Zn donor to substitutional Zn acceptor band transition. Also it was found that recombination due to interstitial Zn donor is dominant near the surface and decreases with increasing depth. The calculated activation energy of substitutional acceptor was found to be 47 meV." @default.
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- W2039884509 date "1997-05-01" @default.
- W2039884509 modified "2023-09-23" @default.
- W2039884509 title "Zn diffusion of In0.5Ga0.5P investigated by photoluminescence measurements" @default.
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- W2039884509 doi "https://doi.org/10.1016/s0040-6090(96)09466-7" @default.
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