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• W2039887411 abstract "We present the effect of all standard scattering mechanisms, including scattering by acoustic and optical phonons, remote and background impurities and dislocation, on two-dimensional electron gas (2DEG) transport in AlGaN/GaN modulation doped-heterostructures. The most important scattering mechanisms limiting electron transport are identified. From the calculated dependence of mobility on temperature, it is clear that dislocation scattering dominates the low-temperature mobility of two-dimensional electrons in GaN/AlGaN structures with a high electron density ns>1012cm−2 and the maximum 2DEG mobilities will be in the 102–104cm2/Vs range for dislocation density of 4×1010cm−2 and carrier densities in the 1×1012–2×1013cm−2. This theoretical calculations fairly agree with the same mobility value obtained by the experimental for 4×1010cm−2 dislocation density. The results are compared to the transport to quantum lifetime ratios due to charge dislocations. We find that the ratio is larger for dislocation scattering than for impurity scattering." @default.
• W2039887411 created "2016-06-24" @default.
• W2039887411 creator A5029489281 @default.
• W2039887411 date "2004-06-01" @default.
• W2039887411 modified "2023-09-29" @default.
• W2039887411 title "Dislocation scattering effect on two-dimensional electron gas transport in GaN/AlGaN modulation-doped heterostructures" @default.
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• W2039887411 doi "https://doi.org/10.1016/j.physe.2003.11.272" @default.
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