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- W2039919986 abstract "NiSi2 layer was formed on Si wafers by metal vapor vacuum arc (MEVVA) ion implantation by a selected Ni-ion current density of 35 μA/cm2 corresponding to a Si surface temperature rise of 380°C, at which there was no size difference between the growing NiSi2 and Si substrates. After implantation to a nominal dose of 2×1017cm−2, the resistivities of the formed NiSi2 layers were measured to be 9 μΩ cm for the bare Si and down to 6 μΩ cm for the Si with a pre-deposited 10 nm Ni overlayer, respectively. The unique electrical property of the so-formed NiSi2 layer is discussed in terms of those structure-related factors involved in forming and cooling processes" @default.
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- W2039919986 date "1998-10-01" @default.
- W2039919986 modified "2023-09-28" @default.
- W2039919986 title "Low temperature ion beam synthesis of NiSi2 layers with fine electrical property" @default.
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- W2039919986 doi "https://doi.org/10.1016/s0168-583x(98)00393-0" @default.
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