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- W2039931907 abstract "Abstract AuTaO films have been made by reactive sputtering, with sheet resistivities of up to 4kΩ/□, temperature coefficients of resistance of less than ∼ 300 ppm/°C and stability of Some further work to improve stability would be necessary to take practical advantage of the high sheet resistivity available." @default.
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- W2039931907 date "1971-12-01" @default.
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- W2039931907 title "Sputtered AuTaO cermet for thin film resistors— A preliminary study" @default.
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