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• W2040148185 abstract "CuGaxIn1−xSe2 is a potential absorber material for the fabrication of heterojunction solar cells. CuGaxIn 1−x Se2 films (0.5−3.0 μm), grown at Ts=598−648 K on Corning 7059 glass substrates using the flash evaporation technique, were p-type, nearly stoichiometric and polycrystalline with a chalcopyrite structure. Polycrystalline thin film n-CdS/p-CuGaxIn1−x Se2 heterojunctions were fabricated with a back-wall configuration and the junction characteristics were evaluated in terms of current density-voltage, capacitance-voltage and spectral response measurements. The electrical conversion efficiency obtained for cells with an active area of 1 cm2 under a solar input of 85 mW cm−2 was 7.6%, 6.7% and 6.5% respectively for CuGaxIn1−x Se2 cells with x=0.25, 0.50 and 0.75." @default.
• W2040148185 created "2016-06-24" @default.
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• W2040148185 date "1993-12-01" @default.
• W2040148185 modified "2023-09-22" @default.
• W2040148185 title "Characterization of n-CdS/p-CuGaxIn1−xSe2 thin film heterojunctions" @default.
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• W2040148185 doi "https://doi.org/10.1016/0040-6090(93)90637-5" @default.
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