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- W2040216171 abstract "In this paper, recent results of a study of interface formation and microstructural evolution during the growth of hydrogenated amorphous silicon (a-Si:H) will be reviewed. In situ ellipsometry experiments using a photon energy of 3.4 eV have been applied to characterize the thin film nucleation process under different conditions of film preparation. In addition, monolayer sensitivity to changes in the modulation depth of surface roughness layers is achieved during growth. Spectroscopic ellipsometry measurements have been used to establish the absolute thickness of roughness layers at the surface of a-Si:H and at the a-Si0<sub>2</sub>/a-Si:H interface. An in situ study of a-Si:H/a-SiNx:H/a-Si:H deposition reveals an asymmetry in the interface structure depending on the order of deposition. These are a sampling of the important results that establish ellipsometry as an ideal in situ probe of the growth morphology of thin film amorphous semiconductors." @default.
- W2040216171 created "2016-06-24" @default.
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- W2040216171 date "1986-03-12" @default.
- W2040216171 modified "2023-09-26" @default.
- W2040216171 title "In situ Studies Of The Bulk And Interface Structure Of a-Si:H" @default.
- W2040216171 doi "https://doi.org/10.1117/12.961074" @default.
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