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- W2040220324 abstract "Abstract The multilevel storage properties of Cu/WO 3 /Pt structure devices are demonstrated. By the application of suitable compliance current values, the Cu/WO 3 /Pt memory device can be driven to various resistance states. Some distinguishable states are reproducible over 100 dc switching cycles, and such states remain stable over 10 4 seconds. The multilevel memory effect in the Cu/WO 3 /Pt device can be attributed to the combination of the radial growth of filaments and the formation of more conductive filaments when applying a higher compliance current during the set process. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2040220324 date "2010-06-01" @default.
- W2040220324 modified "2023-10-17" @default.
- W2040220324 title "Nonvolatile multilevel memory effect in Cu/WO<sub>3</sub>/Pt device structures" @default.
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- W2040220324 doi "https://doi.org/10.1002/pssr.201004086" @default.
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