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• W2040251184 startingPage "S56" @default.
• W2040251184 abstract "An etch-back procedure of anodically oxidized Si(1 1 1) surfaces was investigated by photoluminescence, photo voltage, atomic force microscopy and infrared spectroscopic ellipsometry. The first step was the preparation of an H-terminated Si surface in diluted HF solution. The second step was the formation of an anodic oxide layer at different potentials in 40% NH4F solution followed by oxide etching in the same solution leading to an H-passivated Si surface. The different experimental results are discussed with respect to oxide thickness, surface roughness, interface defect concentration and surface charging." @default.
• W2040251184 created "2016-06-24" @default.
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• W2040251184 date "2007-03-20" @default.
• W2040251184 modified "2023-09-24" @default.
• W2040251184 title "Electronic and surface properties during the etch-back of anodic oxides on Si(1 1 1) surfaces in 40% NH₄F solution" @default.
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• W2040251184 doi "https://doi.org/10.1088/0960-1317/17/4/s05" @default.
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