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• W2040281768 abstract "A stacked Y/sub 2/O/sub 3//HfO/sub 2/ multimetal gate dielectric with improved electron mobility and charge trapping characteristics is reported. Laminated hafnium and yttrium were sputtered on silicon followed by post-deposition anneal (PDA) in N/sub 2/ ambient. The new dielectric shows a similar scalability to HfO/sub 2/ reference. Analysis on flatband voltage shift indicates positive fixed charge induced by Y/sub 2/O/sub 3/. Excellent transistor characteristics have been demonstrated. Stacked Y/sub 2/O/sub 3//HfO/sub 2/, compared to HfO/sub 2/ reference with similar equivalent oxide thickness (EOT), shows 49% enhancement in transconductance and 65% increase in the peak electron mobility. These improvements may be attributed to better charge trapping characteristics of the multimetal dielectric." @default.
• W2040281768 created "2016-06-24" @default.
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• W2040281768 date "2005-12-01" @default.
• W2040281768 modified "2023-09-24" @default.
• W2040281768 title "Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric" @default.
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• W2040281768 doi "https://doi.org/10.1109/led.2005.859637" @default.
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