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• W2040324404 abstract "In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the Top-of-the-barrier approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model's validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtained." @default.
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• W2040324404 date "2012-10-01" @default.
• W2040324404 modified "2023-10-18" @default.
• W2040324404 title "Extending ballistic graphene FET lumped element models to diffusive devices" @default.
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• W2040324404 doi "https://doi.org/10.1016/j.sse.2012.06.004" @default.
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