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- W2040339924 abstract "Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen bonding. Infrared spectroscopic ellipsometry (IR-SE) allows a direct measurement of the relative absorption strength of various hydrogen-related modes, giving some insight into the hydrogen content and relative disorder of films. IR-SE is used here to develop a parameterization of e=e 1 +ie 2 for several thin (< 300 nm) hydrogenated amorphous germanium (a-Ge:H) and a-Si:H films deposited onto silicon nitride or titanium-coated crystalline silicon substrates." @default.
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- W2040339924 date "2012-06-01" @default.
- W2040339924 modified "2023-10-05" @default.
- W2040339924 title "Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry" @default.
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- W2040339924 doi "https://doi.org/10.1109/pvsc.2012.6318239" @default.
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