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• W2040343275 abstract "A method for the dry thermal oxidation of a strained SiGe layer is proposed. By oxidation of a graded Si1−xGex layer, the effect of Ge pileup was significantly reduced and the undesirable strain relaxation by defect formation is prohibited. After oxidation, the oxidized SiGe layer was homogenized by postannealing process, and thereby a SiO2/SiGe interface with good structural properties was obtained. During postannealing, the homogenization was significantly enhanced by strain-induced diffusion, and it was clearly proved by the uphill diffusion. This result can propose an alternative oxidation method of strained SiGe/Si heterostructures." @default.
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• W2040343275 date "2001-11-26" @default.
• W2040343275 modified "2023-09-25" @default.
• W2040343275 title "Dry thermal oxidation of a graded SiGe layer" @default.
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• W2040343275 doi "https://doi.org/10.1063/1.1415373" @default.
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