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- W2040365647 abstract "Abstract To reduce surface recombination velocity (SRV) at the interface between amorphous Si (a-Si) and crystalline silicon (c-Si), we particularly investigated the treatment of c-Si surface prior to a-Si deposition using decomposed radicals of hydrogen (H 2 ) and phosphine (PH 3 ). The SRV can be reduced dramatically to 1.6 cm/s only for n-type c-Si, while no such reduction is observed in p-type c-Si. Secondary ion mass spectrometry (SIMS) and the Hall effect measurement actually reveal the existence of phosphorus (P) atoms in c-Si near the surface." @default.
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- W2040365647 date "2011-05-01" @default.
- W2040365647 modified "2023-09-26" @default.
- W2040365647 title "Extremely low recombination velocity on crystalline silicon surfaces realized by low-temperature impurity doping in Cat-CVD technology" @default.
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- W2040365647 doi "https://doi.org/10.1016/j.tsf.2011.01.301" @default.
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