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- W2040371649 abstract "Photoluminescence excitation spectroscopy (PLE) can be a very useful in-line metrology tool for photovoltaic manufacturing of III-V and chalcogenide-based, direct gap solar cells. We report on the experiment and numerical modeling of PLE measurements on GaAs-based test structures. Strong suppression of the band edge photoluminescence (PL) intensity is observed in bare, unpassivated GaAs samples, compared to an AlGaAs/GaAs double heterostructures (DH). Similarly, an observed reduction of PL intensity of the unpassivated samples with increasing excitation energy is associated with surface defects. A numerical drift-diffusion model is developed and two frameworks to describe the surface quality are studied, one involving the surface recombination velocity and one including a single trap level. For lightly-doped samples, where the effect of interface trap charging becomes important, the two simulation approaches lead to different spectroscopic response. For the examined samples, an estimated trap density of N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> ~10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>13</sup> /cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> is deduced." @default.
- W2040371649 created "2016-06-24" @default.
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- W2040371649 date "2012-06-01" @default.
- W2040371649 modified "2023-10-16" @default.
- W2040371649 title "Photoluminescence excitation spectroscopy of p-GaAs surfaces and AlGaAs/GaAs interfaces supported by numerical modeling" @default.
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- W2040371649 doi "https://doi.org/10.1109/pvsc.2012.6317649" @default.
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