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- W2040392499 abstract "Low temperature luminescence spectra of pure and Sn-doped epitaxial GaAs are reported. Distant donor-acceptor pair transitions and conduction band to acceptor transitions are investigated in magnetic fields up to 12 T. The shifts of donor-acceptor emission lines in unintentionally doped samples are in quantitative agreement with the calculated variation of the donor binding energy and of the Coulomb term. A considerable change in the magnetic behaviour at donor concentrations n > 5 × 1015 cm−3 is qualitatively discussed in terms of screening effects by free carriers on the impurity potential and impurity band formation. The shift of conduction band to acceptor transitions is linear up to the highest field. Es wird über die Lumineszenz von reinem und Sn-dotiertem GaAs bei tiefen Temperaturen berichtet. Donator-Akzeptor-Paarbanden und Leitungsband-Akzeptor-Übergänge werden in Magnetfeldern bis 12 T untersucht. Die Verschiebung der Donator-Akzeptor Emissionslinien in undotierten Proben stimmt quantitativ mit der berechneten Änderung der Donatorbindungsenergie und des Coulombterms überein. Bei Donatorkonzentrationen von n > 5 × 1015 cm−3 ändert sich das magnetische Verhalten beträchtlich. Dies Verhalten wird qualitativ durch Abschirmung des Störstellenpotentials durch freie Ladungsträger und das Auftreten eines Störbandes erklärt. Die Verschiebung der Leitungsband-Akzeptor-Übergänge ist bis zum höchsten Feld linear." @default.
- W2040392499 created "2016-06-24" @default.
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- W2040392499 date "1973-12-01" @default.
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- W2040392499 title "GaAs Luminescence Transitions to Acceptors in Magnetic Fields" @default.
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- W2040392499 doi "https://doi.org/10.1002/pssb.2220600231" @default.
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