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- W2040405356 abstract "The channel avalanche breakdown in GaAs MESFET's has been investigated using nonstationary electron dynamics and an ionization coefficient taken as a function of average electron energy. Stationary high-field domains of different shapes and peak-field localization are calculated at the breakdown, depending on technological parameters, device geometry or gate bias. Design rules are given to obtain maximum saturated output power and a full-channel current breakdown voltage comparable to the one near pinchoff. In particular, it is found that both a recessed channel geometry and an increased gate-drain distance should yield the best device performances with a doping level not higher than about 1.2-10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>17</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> and a channel current I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dss</inf> between 275 and 330 mA/mm." @default.
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- W2040405356 date "1983-02-01" @default.
- W2040405356 modified "2023-09-26" @default.
- W2040405356 title "Theoretical analysis of the DC avalanche breakdown in GaAs MESFET's" @default.
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- W2040405356 doi "https://doi.org/10.1109/t-ed.1983.21089" @default.
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