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- W2040458206 abstract "Microcrystalline Si 1- x N x :H films were prepared by r.f. glow-discharge of SiH 4 –PH 3 –N 2 –H 2 mixtures with the gas volume ratio of N 2 to SiH 4 maintained at 0.06. Incorporation effects of nitrogen on the electrical and optical properties, in connection with the degree of crystallization, have been investigated as a function of the substrate temperature T s and r.f. power. The crystallization is observed at T s between 250 and 400°C, but not at other T s This is in good correspondence to the increase in dark conductivity. The degree of crystallization and optical gap increase with r.f. power. A model for the crystallization process is proposed." @default.
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- W2040458206 date "1986-02-01" @default.
- W2040458206 modified "2023-10-17" @default.
- W2040458206 title "Incorporation Effects of Nitrogen into Phosphorus Doped Microcrystalline Si:H Films" @default.
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- W2040458206 doi "https://doi.org/10.1143/jjap.25.l114" @default.
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