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• W2040484890 abstract "A first time rigorous experimental study of effective current (I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>eff</sub> ) variability in high-volume manufacturable (HVM) 14nm Silicon-On-Insulator (SOI) FINFETs is reported which identifies, threshold voltage (Vtlin), external resistance (Rext), and channel trans-conductance (Gm) as three independent sources of variation. The variability in Gm, Vtlin (A <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>VT</sub> =1.4(n)/0.7(p) mV-μm), and Ieff exhibit a linear Pelgrom fit indicating local variations, along with non-zero intercept which suggests the presence of global variations at the wafer level. Relative contribution of Gm to Ieff variability is dominant in FINFETs with small number of fins (Nfin); however, both Gm and Rext variations dominate in large Nfin devices. Relative contribution of Vtlin remains almost independent of Nfin. Both n and p FINFETs show the above mentioned trends." @default.
• W2040484890 created "2016-06-24" @default.
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• W2040484890 date "2013-12-01" @default.
• W2040484890 modified "2023-10-02" @default.
• W2040484890 title "Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs" @default.
• W2040484890 cites W2140823559 @default.
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• W2040484890 doi "https://doi.org/10.1109/iedm.2013.6724625" @default.
• W2040484890 hasPublicationYear "2013" @default.
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