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• W2040491154 abstract "A 1.9 µm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated." @default.
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• W2040491154 date "2013-05-01" @default.
• W2040491154 modified "2023-10-01" @default.
• W2040491154 title "1.9 µm hybrid silicon/III‐V semiconductor laser" @default.
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• W2040491154 doi "https://doi.org/10.1049/el.2013.0674" @default.
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