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• W2040566676 abstract "Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm2V−1s−1, large memory window (∼16 V), low read voltages (∼−1 V) and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices." @default.
• W2040566676 created "2016-06-24" @default.
• W2040566676 creator A5033449142 @default.
• W2040566676 creator A5035218738 @default.
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• W2040566676 date "2014-06-10" @default.
• W2040566676 modified "2023-10-12" @default.
• W2040566676 title "Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility" @default.
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• W2040566676 doi "https://doi.org/10.1038/srep05243" @default.
• W2040566676 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/4050383" @default.
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