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- W2040569498 abstract "A comparative study is presented of newly developed Pd/Sn/Au and conventional alloyed Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni ohmic contacts to n-GaAs. Metallization samples are furnace annealed at various temperatures and systematically characterized utilizing Scanning Electron Microscopy (SEM) and current–voltage (I–V) measurements. Contact resistivities, ρc, of the proposed metallizations are measured using a conventional Transmission Line Model (TLM) method. A lowest ρc of 8.13×10−6 Ω cm2 is obtained with the Pd(50 nm)/Sn(125 nm)/Au(100 nm) contacts on Si-doped 2×1018 cm−3 n-GaAs after annealing at 300°C for 30 min. The five-layer Au(14 nm)/Ge(14 nm)/Au(14 nm)/Ni(11 nm)/Au(200 nm) contacts show improved characteristics when compared to the conventional alloyed Au-Ge(150 nm)/Ni(16 nm) and Ni(5 nm)/Au-Ge(150 nm)/Ni(16 nm) metallizations with a ρc of 6.49×10−6 Ω cm2 after alloying at 430°C for 6 min. The Pd/Sn/Au ohmic contacts display comparable thermal stability at 410°C to the alloyed Au/Ge/Au/Ni/Au contacts. After annealing at 410°C for 10 h, ρc of the Pd(50 nm)/Sn(125 nm)/Au(100 nm) metallizations remain in the low 10−5 Ω cm2 range." @default.
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- W2040569498 title "A comparative study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni ohmic contacts to n-GaAs" @default.
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- W2040569498 doi "https://doi.org/10.1016/s0167-9317(97)00184-6" @default.
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