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- W2040571199 abstract "A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The current-voltage characteristics of the heterojunction diode were measured and the result indicated that the rectification ratio reached 105, and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively." @default.
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- W2040571199 date "2002-10-01" @default.
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- W2040571199 title "Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN" @default.
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- W2040571199 doi "https://doi.org/10.1088/0256-307x/19/10/334" @default.
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