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- W2040583082 abstract "A new KrF excimer laser stepper system has been developed for sub-half-micron VLSI's device fabrication. The optical system has a monochromatic 5x reduction-projective lens with a large field area (15mm) and a high numerical aperture (NA:0.36). The excimer laser with intracavity etalon, which is compacted by the seperation of a blower system from the laser head, can produce a practically acceptable power of 40mJ/pulse. The mean value of spectral band width was 0.008 nmFWHM and its dispersion was 2.5% of it. This laser indicated excellent properties and stabilities. From the simulation of the Optical Transfer Function (OTF) of the reduction lens, we have found that the lens of NA=0.36 is most suitable for the spectral band width of 0.008 nmFWHM. We have performed the evaluation experiment of the reduction lens by evaluating the resolution and profile of fabricated resist (MP2400) patterns. As a result, the fine pattern of MP2400 down to 0.35 μm lines-and-spaces was successfully fabricated in the center field of this lens. Therefore, we have a good agreement of actual resolution limit with the theoretical resolution limit. Moreover, We evaluated of resists using this KrF excimer laser stepper system. Evaluated resists were MP2400, HPR1182, RD2000N, TPR101 and SNR, where SNR was used as a top layer resist of bi-layer resist (BLR). As a result, we have found that the highest resolution resist is MP2400. In conclusion, the newly developed KrF excimer laser stepper has been confirmed as an effective technology to fabricate sub-half-micron design rule devices : 16MbitDRAMs." @default.
- W2040583082 created "2016-06-24" @default.
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- W2040583082 date "1988-01-01" @default.
- W2040583082 modified "2023-09-23" @default.
- W2040583082 title "<title>An Advanced KrF Excimer Laser Stepper For Production Of 16MDRAMs</title>" @default.
- W2040583082 doi "https://doi.org/10.1117/12.968438" @default.
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