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- W2040641524 abstract "We have observed a long-lived residual photoconductivity in low-temperature-grown (LT) InGaAs. These results have significant consequences for devices comprised of LT-InGaAs, other defect moderated materials, and standard-temperature-grown InGaAs. Our investigation utilizes time-resolved terahertz conductivity to quantify the trapping and recombination rates of LT Be-doped In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells and bulk InGaAs. It is found that Be doping reduces the residual photoconductivity and increases the initial electron trapping rate. These results are in contrast to those observed via transient absorption studies, which suggest that these systems have returned to equilibrium after the initial transient. Furthermore, a 600 °C anneal increases both the trapping and recombination rate in all Be-doped samples." @default.
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- W2040641524 date "1998-01-26" @default.
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- W2040641524 title "Trapping and recombination dynamics of low-temperature-grown InGaAs/InAlAs multiple quantum wells" @default.
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- W2040641524 doi "https://doi.org/10.1063/1.120766" @default.
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