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- W2040661674 abstract "When the phase change material Ge2Sb2Te5 melts during the RESET switching of a phase change memory (PCM) device, it is known that electromigration (elemental segregation under electric field or current) can cause the region near the positively-biased electrode to become rich in Tellurium. We show that the laser-induced crystallization of deposited films of similarly Tellurium-rich GeSbTe (GST) material is 1000 × slower than the crystallization of conventional Ge2Sb2Te5 material, and that this material can readily flow and create voids at temperatures as low as 350°C. AFM and Auger analysis of Te-rich GST films reveals significant thermal-induced motion and elemental segregation, occurring in the absence of an electrical field and at similarly low temperatures. This phenomenon, termed crystallization-induced segregation, occurs when material rearrangement within the poorly-crystallizing, under–cooled–liquid Te-rich GST matrix forms a local stoichiometry which is capable of much more rapid crystallization. The process of crystallization itself then reinforces this stoichiometry, at the expense of the elements not needed, with a growth–rate limited by material diffusion. This crystallization-induced segregation — which can readily occur in GST-based phase change memory (PCM) devices, especially after the onset of electromigration — is an important additional component to understanding both bias-polarity-based phenomena and endurance failure in GST–based PCM devices." @default.
- W2040661674 created "2016-06-24" @default.
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- W2040661674 date "2011-01-01" @default.
- W2040661674 modified "2023-10-14" @default.
- W2040661674 title "Evidence of Crystallization–Induced Segregation in the Phase Change Material Te-Rich GST" @default.
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- W2040661674 doi "https://doi.org/10.1149/1.3614508" @default.
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