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- W2040679931 abstract "The electrical characterization of HfO2/ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO2/ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed." @default.
- W2040679931 created "2016-06-24" @default.
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- W2040679931 date "2014-06-16" @default.
- W2040679931 modified "2023-10-18" @default.
- W2040679931 title "Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy" @default.
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- W2040679931 doi "https://doi.org/10.1063/1.4884389" @default.
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