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• W2040767071 abstract "A multi-scale approach connecting the atomistic process simulations to the device-level simulations has been applied to the Si(100)/SiO2 interface system. The oxidation of Si(100) surface was simulated by the atomic level molecular dynamics, the electronic structure of the resultant Si/suboxide/SiO2 interface was then obtained by the first-principles calculations, and finally, the leakage currents through the SiO2 gate dielectric were evaluated, with the obtained interface model, by the non-equilibrium Green's function method. We have found that the suboxide layers play a significant role for the electronic properties of the interface system and hence the leakage currents through the gate dielectric." @default.
• W2040767071 created "2016-06-24" @default.
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• W2040767071 date "2013-02-15" @default.
• W2040767071 modified "2023-10-18" @default.
• W2040767071 title "Effects of suboxide layers on the electronic properties of Si(100)/SiO2 interfaces: Atomistic multi-scale approach" @default.
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• W2040767071 doi "https://doi.org/10.1063/1.4791706" @default.
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