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- W2040778103 abstract "The performances of InGaP/AlxGa1−xAs/GaAs heterojunction bipolar transistors (HBTs) with different doping concentrations of AlxGa1−xAs graded layers are theoretically studied. The use of the AlxGa1−xAs graded layer plays a key role in affecting the direct current and radio frequency performances of the studied HBTs. It is found that the studied devices with suitable doping concentrations of AlxGa1−xAs graded layers exhibit lower offset voltages, saturation voltages, and base and collector current ideality factors. Furthermore, due to the use of proper doping concentrations of AlxGa1−xAs graded layers, the studied devices show high values of the unity current gain cut-off frequency (fT) and maximum oscillation frequency (fmax). It is known that, from the theoretical analysis, the appropriate doping concentration of the AlxGa1−xAs graded layer is 1 × 1016 to 1 × 1018 cm−3. Consequently, this work is promising for device engineers to design high-performance HBT structures." @default.
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- W2040778103 date "2003-12-22" @default.
- W2040778103 modified "2023-10-17" @default.
- W2040778103 title "Comprehensive study of InGaP/AlxGa1 xAs/GaAs heterojunction bipolar transistors with different doping concentrations of AlxGa1 xAs graded layers" @default.
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- W2040778103 doi "https://doi.org/10.1088/0268-1242/19/3/010" @default.
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