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- W2040781646 abstract "We studied the DX center concentration in Se-doped AlxGa1−x As layers grown by molecular beam epitaxy. In the shallow to DX transition region around x=0.2, the concentration of DX centers was far lower when compared to that of Si-doped layers. We applied Se-doped AlGaAs layers to selectively doped AlGaAs/GaAs heterostructures to avoid the influence of DX centers. By optimizing growth conditions, electron mobilities as high as 74 000 cm2 /V s (x=0.26) and 44 000 cm2 /V s (x=0.19) were achieved at 77 K for heterostructures with 60-Å-thick spacer layers." @default.
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- W2040781646 date "1988-11-14" @default.
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- W2040781646 title "Selectively Se-doped AlGaAs/GaAs heterostructures with reduced <i>D</i> <i>X</i> center concentrations grown by molecular beam epitaxy" @default.
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- W2040781646 doi "https://doi.org/10.1063/1.100347" @default.
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