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- W2040793174 abstract "Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 1016–1021 cm− 3, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated." @default.
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- W2040793174 date "2013-03-01" @default.
- W2040793174 modified "2023-09-26" @default.
- W2040793174 title "Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters" @default.
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- W2040793174 doi "https://doi.org/10.1016/j.tsf.2013.01.078" @default.
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