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- W2040794899 abstract "Low-temperature magnetotransport measurements on a molecular-beam-epitaxy-grown pseudomorphic GaAs-Ga0.87In0.13As-AlxGa1−xAs-GaAs semiconductor-insulator-semiconductor field-effect transistor are reported. In magnetic fields up to 12 T, the sample reveals clearly the integer quantum Hall effect. By varying the gate voltage, the sheet electron concentration of the two-dimensional electron gas can be tuned from depletion to 2×1012 cm−2. The dependence of the electron concentration and the mobility is studied as a function of the gate voltage." @default.
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- W2040794899 date "1991-09-09" @default.
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- W2040794899 title "Low-temperature magnetotransport experiments in pseudomorphic GaAs/Ga0.87In0.13As/Al0.40Ga0.60As semiconductor-insulator-semiconductor field-effect transistors" @default.
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- W2040794899 doi "https://doi.org/10.1063/1.105487" @default.
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