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• W2040802705 endingPage "3218" @default.
• W2040802705 startingPage "3214" @default.
• W2040802705 abstract "The impact of TiN deposition on thin high-k (HfO2 and HfSiON) films formed on Si substrates was studied using monoenergetic positron beams. For the predeposition sample, the positrons implanted into Si diffuse toward the high-k/Si interface under the influence of the electric field, suggesting the presence of negative charges in the high-k films. After TiN was deposited on HfO2, positive charges were introduced at the TiN/HfO2 interface, which were associated with the incorporation of nitride into HfO2, resulting in the formation of positively charged oxygen vacancies (VOs). From the isochronal annealing experiments for TiN/HfSiON/Si, it was found that positively charged defects (such as VO) were introduced into HfSiON after annealing at 700–900 °C. These defects were introduced by the interaction between TiN and HfSiON, resulting in the formation of polycrystalline TiO2 at the interface. The positively charged defects were annealed out at 1100 °C, but the dielectric properties of HfSiON degraded." @default.
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• W2040802705 date "2007-05-17" @default.
• W2040802705 modified "2023-09-26" @default.
• W2040802705 title "Characterization of Metal/High-<i>k</i>Structures Using Monoenergetic Positron Beams" @default.
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• W2040802705 doi "https://doi.org/10.1143/jjap.46.3214" @default.
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