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- W2040805053 abstract "Highly p-type GaN films with hole concentrations exceeding 6 × 1019 cm−3 grown by metal-modulated epitaxy are electrically characterized. Temperature-dependent Hall effect measurements at cryogenic temperatures reveal minimal carrier freeze-out in highly doped samples, while less heavily doped samples exhibited high resistivity and donor-compensated conductivity as is traditionally observed. Effective activation energies as low as 43 meV were extracted, and a maximum Mg activation efficiency of 52% was found. In addition, the effective activation energy was found to be negatively correlated to the hole concentration. These results indicate the onset of the Mott-Insulator transition leading to impurity band conduction." @default.
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- W2040805053 date "2012-08-20" @default.
- W2040805053 modified "2023-10-04" @default.
- W2040805053 title "Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN" @default.
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