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- W2040806412 abstract "The electronic structure of natural oxide layers and of oxygen adsorbed on the surface of sputtered a-Si and a-Si(H) thin films are investigated by combining ultraviolet photoemission spectroscopy and X-ray photoemission spectroscopy. The emission structure in the valence band region which is derived from the oxygen and silicon orbitals, is found to represent the nondissociative adsorption of oxygen on a-Si(H) surface independently of hydrogen content. XPS study of Si2s and Si2p core levels shows a minimally 0.3 eV smaller value of the chemical shift in the case of naturally oxidized a-Si(H) and a-Si films than the value measured on c-Si oxidized under the same conditions. The ion-beam effect on oxide layers is briefly discussed. Die Elektronenstruktur von natürlichen Oxidschichten und adsorbiertem Sauerstoff auf der Oberfläche durch Zerstäubung erzeugter dünner a-Si- und a-Si(H)-Schichten wird mittels UV- und Röntgenphotoelektronenspektroskopie untersucht. Für die Emissionsstruktur des Valenzbandgebietes, das aus Sauerstoff- und Siliziumorbitalen abgeleitet ist, wird gefunden, daß sie die nichtdissoziative Adsorption von Sauerstoff auf der a-Si(H)-Oberfläche unabhängig vom Wasserstoffgehalt repräsentiert. Röntgen-PS-Untersuchungen der Si2s- und Si2p-core-Niveaus zeigen einen mindestens um 0,3 eV kleineren Wert der chemischen Verschiebung für natürlich oxidierte a-Si- und a-Si(H)-Schichten gegenüber dem Werte, der an unter gleichen Bedingungen oxidierten c-Si gemessen wird. Der Ionenstrahleinfluß auf die Oxidschicht wird kurz beschrieben." @default.
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- W2040806412 date "1982-02-01" @default.
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- W2040806412 title "Photoemission Study of Oxygen Adsorbed on Sputtered a-Si(H) and a-Si" @default.
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- W2040806412 doi "https://doi.org/10.1002/pssb.2221090207" @default.
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